Toshiba Corporation’s Semiconductor & Storage Products Company has announced the launch of “TPD7104F”, a 1-channel high-side N-channel power MOSFET gate driver. The new product is an all-in-one circuit for charge pumps and can be operated at lower voltages compared to Toshiba conventional products, at VDD(opr) = 5 to 18V. Shipment available now.
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|Key Specifications of the New Product|
|1. BiCD 0.13μm process|
|2. Supply voltage: VDD(opr)=5 to 18V|
|3. Built-in overcurrent protection functions|
|4. Built-in overcurrent diagnostic functions|
|5. Output voltage|
|VOUT=VDD+8V(Min)@VDD=5V, IOUT=-100μA, Tj=-40 to 125°C|
|VOUT=VDD+10V(Min)@VDD=8 to 18V, IOUT=-100μA, Tj=-40 to 125°C|
|6. Small package|
|PS-8 (2.8mm x 2.9mm)|
Applications Automotive applications for driving high-side N-channel MOSFETs used in 12V batteries, including semiconductor relays and semiconductor load switches for idle stop systems and electric power steering (EPS).
Notes:  Comparison with “TPD7102F” (VDD=7 to 18V)